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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 34 i d @ v gs = 12v, t c = 100c continuous drain current 21 i dm pulsed drain current ? 136 p d @ t c = 25c max. power dissipation 150 w linear derating factor 1.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? 34 a e ar repetitive avalanche energy ? 15 mj dv/dt p eak diode recovery dv/dt ? 5.5 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 ( 0.063 in.(1.6mm) from case for 10s) weight 11.5 (typical ) g pre-irradiation international rectifiers radhard hexfet ? technol- ogy provides high performance power mosfets for space applications. this technology has over a de- cade of proven performance and reliability in satellite applications. these devices have been character- ized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. o c a radiation hardened power mosfet thru-hole (t0-204) 03/21/01 www.irf.com 1 100v, n-channel rad hard ? hexfet ? technology product summary part number radiation level r ds(on) i d irh7150 100k rads (si) 0.065 34a irh3150 300k rads (si) 0.065 34a irh4150 600k rads (si) 0.065 34a irh8150 1000k rads (si) 0.065 34a for footnotes refer to the last page irh7150 to-204ae features: single event effect (see) hardened low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed ceramic package light weight pd - 90677d downloaded from: http:///
2 www.irf.com irh7150 pre-irradiation note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 34 i sm pulse source current (body diode) ? 136 v sd diode forward voltage 1.4 v t j = 25c, i s = 34a, v gs = 0v ? t rr reverse recovery time 570 ns t j = 25c, i f = 34a, di/dt 100a/ s q rr reverse recovery charge 5.8 c v dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units test conditions r thjc junction-to-case 0.83 r thja junction-to-ambient 30 c/w r thcs case-to-sink 0.12 typical socket mount electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.13 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.065 v gs = 12v, i d = 21a resistance 0.076 v gs = 12v, i d = 34a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 8.0 s ( )v ds > 15v, i ds = 21a ? i dss zero gate voltage drain current 25 v ds = 80v ,v gs =0v 250 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 160 v gs =12v, i d = 34a q gs gate-to-source charge 35 nc v ds = 50v q gd gate-to-drain (miller) charge 65 t d (on) turn-on delay time 45 v dd = 50v, i d = 34a t r rise time 190 v gs =12v, r g = 2.35 t d (off) turn-off delay time 170 t f fall time 130 l s + l d total inductance 10 measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 4300 v gs = 0v, v ds = -25v c oss output capacitance 1200 pf f = 1.0mhz c rss reverse transfer capacitance 200 na ? nh ns a downloaded from: http:///
www.irf.com 3 pre-irradiation irh7150 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 600 to 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 200 200 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 50 a v ds =80v, v gs =0v r ds(on) static drain-to-source ? 0.065 0.09 v gs = 12v, i d =21a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.065 0.09 v gs = 12v, i d =21a on-state resistance (to-204aa) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part number irh71502. part numbers irh3150, irh4150 and irh8150 fig a. single event effect, safe operating area v sd diode forward voltage ? 1.4 1.4 v v gs = 0v, i s = 34a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range v ds(v) mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =-5v @ v gs =-10v @ v gs =-15v @ v gs =-20v cu 28 285 43 100 100 100 80 60 br 36.8 305 39 100 90 70 50 0 20 40 60 80 100 120 0 -5 -10 -15 -20 -25 vgs vds cu br downloaded from: http:///
4 www.irf.com irh7150 pre-irradiation post-irradiation fig 2. typical response of on-state resistance vs. total dose exposure fig 1. typical response of gate threshhold voltage vs. total dose exposure fig 3. typical response of transconductance vs. total dose exposure fig 4. typical response of drain to source breakdown vs. total dose exposure downloaded from: http:///
www.irf.com 5 pre-irradiation irh7150 post-irradiation fig 6. typical on-state resistance vs. neutron fluence level fig 5. typical zero gate voltage drain current vs. total dose exposure fig 8b. v dss stress equals 80% of b vdss during radiation fig 9. high dose rate (gamma dot) test circuit fig 7. typical transient response of rad hard hexfet during 1x10 12 rad (si)/sec exposure fig 8a. gate stress of v gss equals 12 volts during radiation downloaded from: http:///
6 www.irf.com irh7150 pre-irradiation post-irradiation radiation characteristics fig 11. typical output characteristics post-irradiation 100k rads (si) fig 10. typical output characteristics pre-irradiation fig 12. typical output characteristics post-irradiation 300k rads (si) fig 13. typical output characteristics post-irradiation 1 mega rads (si) note: bias conditions during radiation: v gs = 12 vdc, v ds = 0 vdc downloaded from: http:///
www.irf.com 7 pre-irradiation irh7150 radiation characteristics fig 16. typical output characteristics post-irradiation 300k rads (si) fig 17. typical output characteristics post-irradiation 1 mega rads (si) fig 14. typical output characteristics pre-irradiation fig 15. typical output characteristics post-irradiation 100k rads (si) note: bias conditions during radiation: v gs = 0 vdc, v ds = 160 vdc downloaded from: http:///
8 www.irf.com irh7150 pre-irradiation fig 21. normalized on-resistance vs. temperature fig 19. typical output characteristics fig 18. typical output characteristics fig 20. typical transfer characteristics downloaded from: http:///
www.irf.com 9 pre-irradiation irh7150 fig 25. maximum safe operating area fig 23. typical gate charge vs. gate-to-source voltage fig 22. typical capacitance vs. drain-to-source voltage fig 24. typical source-drain diode forward voltage downloaded from: http:///
10 www.irf.com irh7150 pre-irradiation fig 27a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 27b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 28. maximum effective transient thermal impedance, junction-to-case fig 26. maximum drain current vs. case temperature v gs 25 50 75 100 125 150 0 5 10 15 20 25 30 35 t , case temperature ( c) i , drain current (a) c d downloaded from: http:///
www.irf.com 11 pre-irradiation irh7150 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 30b. gate charge test circuit fig 30a. basic gate charge waveform fig 29c. maximum avalanche energy vs. drain current fig 29b. unclamped inductive waveforms fig 29a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs downloaded from: http:///
12 www.irf.com irh7150 pre-irradiation ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 25v, starting t j = 25 c, l=0.86mh peak i l = 34a, v gs =12v ? i sd 34a, di/dt 140a/ s, v dd 100v, t j 150 c foot notes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/01 case outline and dimensions to-204ae downloaded from: http:///

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